1.
Ming-Ting Wu, Jun-Wei Fan, Kuan-Ting Chen, Shu-Tong Chang, Chung-Yi Lin, “Band Structure and Effective Mass in Monolayer MoS2,” Journal of Nanoscience and Nanotechnology, no. 15, pp. 9151–9157, 11 2015. (SCI)
2.
S.-Y. Cheng, K.-T. Chen, and S. T. Chang, “Impact of Strain on Hole Mobility in the Inversion Layer of PMOS Device with SiGe Alloy Thin Film,” Thin Solid Films, no. 584, pp. 135–140, 06 2015. (SCI)
3.
Chia-Feng Lee, Ren-Yu He, Kuan-Ting Chen, Shu-Ying Cheng, Shu-Tong Chang, “Strain engineering for electron mobility enhancement of strained Ge NMOSFET with SiGe alloy source/drain stressors,” Microelectronic Engineering, no. 138 , pp. 12–16, 01 2015. (SCI)
4.
Kuan-Ting Chen, Jun-Wei Fan, Shu-Tong Chang, and Chung-Yi Lin, “Subband Structure and Effective Mass in the Inversion Layer of a Strain Si-Based Alloy P-Type MOSFET,” Journal of Nanoscience and Nanotechnology, no. 15, pp. 2168, 01 2015. (SCI)
5.
M. H. Lee, P.-G. Chen and S. T. Chang, “Analysis of Si:C on Relaxed SiGe by Reciprocal Space Mapping for MOSFET Applications,” ECS Journal of Solid State Science and Technology, no. 3, pp. 259-262, 01 2014. (SCI)
6.
M. H. Lee, B.-F. Hsieh, S. T. Chang, “Electrical properties correlated with redistributed deep states in a-Si:H thin-film transistors on flexible substrates undergoing mechanical bending,” Thin Solid Films, vol. 15, no. 528, pp. 82-85, 01 2013. (SCI)
7.
S.T. Chang, B.-F. Hsieh, Y.-C. Liu, “A simulation study of thin film tandem solar cells with a nanoplate absorber bottom cell,” Thin Solid Films, vol. 8, no. 520, pp. 3369-3373, 02 2012. (SCI)
8.
Shu-Tong Chang, Jun Wei Fan, Chung-Yi Lin, Ta-Chun Cho, Ming Huang, “Hole effective masses of p-type metal-oxide-semiconductor inversion layer in strained Si1-xGex alloys channel on (110) and (111) Si substrates ,” Journal of Applied Physics, vol. 3, no. 111, pp. 033712-033712-8, 02 2012. (SCI)
9.
Wen-Kai Lin, Kou-Chen Liu, Shu-Tong Chang, Chi-Shiau Li, “Room temperature fabricated transparent amorphous indium zinc oxide based thin film transistor using high-κ HfO2 as gate insulator,” Thin Solid Films, vol. 7, no. 520, pp. 3079-3083, 01 2012. (SCI)
10.
C.J. Chiu , Z.W. Pei , S.T. Chang , S.P. Chang , S.J. Chang, “Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing,” Vacuum, no. 86, pp. 246-249, 01 2011. (SCI)
11.
Ting-Hsiang Huang, Kou-Chen Liu, Zingway Pei, Wen-Kai Lin, Shu-Tong Chang, “A poly(styrene-co-methyl methacrylate)/room-temperature sputtered hafnium oxide bi-layer dielectrics as gate insulator for a low voltage organic thin-film transistors,” Organic Electronics, no. 12, pp. 1527-1532, 01 2011. (SCI)
12.
Bing-Fong Hsieh and Shu-Tong Chang, “Subband Structure and Effective Mass of Relaxed and Strained Ge (110) PMOSFETs,” Solid-State Electronics, no. 60, pp. 37-41, 01 2011. (SCI)
13.
Wen-Kai Lin, Kou-Chen Liu, Jyun-Ning Chen, Sung-Cheng Hu and Shu-Tong Chang, “The influence of fabrication process on top-gate thin-film Transistors,” Thin Solid Films, no. 519, pp. 5126-5130, 01 2011. (SCI)
14.
M. H. Lee, S. T. Chang, B.-F. Hsieh, J.-J. Huang, and C.-C. Lee, “Analysis and Modeling of Nano-Crystalline Silicon TFTs on Flexible Substrate with Mechanical Strain,” Journal of Nanoscience and Nanotechnology, no. 11, pp. 1-4, 01 2011. (SCI)
15.
M. H. Lee, S. T. Chang, T.-H. Wu, W.-N. Tseng, “Driving Current Enhancement of Strained Ge (110) p-type Tunnel FETs and Anisotropic Effect,” IEEE Electron Device Letter, no. 32, pp. 1355-1357, 01 2011. (SCI)
16.
Ting-Hsiang Huang , Zingway Pei , Wen-Kai Lin , Shu-Tong Chang , Kou-Chen Liu , “Oligomer semiconductor/dielectric interface modification for organic thin film transistor hysteresis reduction,” Thin Solid Films, no. 518, pp. 7381-7384, 01 2010. (SCI)
17.
M. H. Lee, S. T. Chang, S. Maikap, C.-Y. Peng, and C.-H Lee, , “High Ge Content of SiGe Channel p-MOSFETs on Si (110) Surfaces,,” IEEE Electron Device Letters, 2010, vol. 2, no. 31, pp. 141-143, 01 2010. (SCI)
18.
M. H. Lee,S. T. Chang, C.-C. Lee,J.-J. Huang, G.-R. Hu,Y.-S. Huang, “The Gap State Density of Micro/Nano-Crystalline Silicon Active Layer on Flexible Substrate ,” Thin Solid Films , no. 518, pp. S246-S249, 01 2010. (SCI)
19.
C.-Y. Peng, C.-F. Huang, Y.-C. Fu, Y.-H. Yang, C.-Y. Lai, S.-T. Chang, and C. W. Liu, “Comprehensive study of the Raman shifts of strained silicon and germanium,” Journal of Applied Physics, vol. 083537-1-10, no. 105, pp. 083537-1-10, 04 2009. (SCI)
20.
Z. Pei,S. T. Chang, C. W. Liu, Y.C. Chen, “Numerical Simulation on the Photovoltaic Behavior of an Amorphous Silicon Nanowire Array Solar Cell,” IEEE Electron Device Letter , no. 30, pp. 1305-1307, 01 2009. (SCI)
21.
Cheng-Yi Peng, Ying-Jhe Yang, Yen-Chun Fu, Ching-Fang Huang, Shu-Tong Chang, and CheeWee Liu, “Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flat-band Voltage of (001), (110) and (111) Metal-Oxide-Silicon Capacitors,” IEEE Trans. Electron Dev., vol. 1736-1745, no. 56, 01 2009. (SCI)
22.
Min-Hung Lee, S. T. Chang, Yi-Chun Wu, Ming Tang, and Chung-Yi Lin, “Mechanical Bending Cycles of Hydrogenated Amorphous Silicon Layer on Plastic Substrate by Plasma-Enhanced Chemical Vapor Deposition for Use in Flexible Displays,” Japanese Journal of Applied Physics, no. 48, pp. 021301-1-4, 01 2009. (SCI)
23.
S. T. Chang, “Strain Effect and Surface Orientation on Drive Current Enhancement of Ballistic Germanium n-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors,” Japanese Journal of Applied Physics, no. 47, pp. 5345-5351, 01 2008. (SCI)
24.
Y.-J. Yang, W. S. Ho, C.-F. Huang, S. T. Chang, and C. W. Liu, “Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect-transistors,” Applied Phys. Lett., no. 91, pp. 102103-1-3, 01 2007. (SCI)
25.
S. T. Chang, Y. H. Liu, M.-H. Lee, S. C. Lu, and M.-J. Tsai, “Optimal Ge Profile Design for Base Transit Time of Si/SiGe HBTs,” Materials Science in Semiconductor Processing, no. 8, pp. 289-294, 01 2005. (SCI)
26.
C. Y. Lin, S. T. Chang, and C. W. Liu, “Hole Effective Mass in Strained Si1-xCx Alloys on Si (001) Substrate,” Journal of Applied Physics, no. 96, pp. 5037-5041, 01 2004. (SCI)
27.
B.-C. Hsu, C.-H. Lin, P.-S. Kuo, S. T. Chang, P. S. Chen, C. W. Liu, J. –H. Lu, and C. H. Kuan, “Novel MIS Ge-Si Quantum Dot Infrared Photodetectors,” IEEE Electron Device Lett., no. 25, pp. 544-546, 01 2004. (SCI)
28.
S. T. Chang, C. W. Liu, and S. C. Lu, “Base Transit Time of Graded-Base Si/SiGe HBTs Considering Recombination Lifetime and Velocity Saturation,” Solid State Electronics, no. 48, pp. 207-215, 01 2004. (SCI)
29.
B.-C. Hsu, S. T. Chang, T.-C. Chen, P.-S. Kuo, P. S. Chen, Z. Pei, and C. W. Liu, “A High Efficient 820 nm MOS Ge Quantum Dot Photodetector,” IEEE Electron Device Lett., no. 24, pp. 318-320, 01 2003. (SCI)
30.
S. T. Chang, C. Y. Lin, and C. W. Liu, “Energy Band Structure of Strained Si1-xCx alloys on Si(001) Substrate,” Journal of Applied Physics, no. 92, pp. 3717-3723, 01 2002. (SCI)