1.

江雨龍, “矽薄膜太陽電池的發展,” 化工技術, no. 212,第18卷第11期, pp. 80-108 (2010), 01 2010.

2.

Chia-Wei Huang, Hsuan-Mei Weng, Yeu-Long Jiang, Herng-Yih Ueng, “Optimum growth of ZnSe film by molecular beam deposition,” Vacuum 83, 313–318 , 2009. (EI、SCI)

3.

Chia-Wei Huang, Hsuan-Mei Weng, Yeu-Long Jiang, Herng-Yih Ueng, “Investigation on the properties of molecular beam deposited ZnSe films,” Thin Solid Films 517, 3667–3671, 2009. (SCI)

4.

S. S. Tan, C. Y. Liu, Yeu-Long Jiang, Der-Yu Lin, and Klaus Y. J. Hsu, “Spectral response design of hydrogenated amorphous silicon p-i-n diodes for ambient light sensing,” Appl. Phys. Lett. 94, 171103, 2009. (SCI)

5.

Yeu-Long Jiang, Pei-Tzong Shih and Tai-Chao Kuo, “Hydrogenated amorphous silicon a-Si:Hx/a-Si:Hy compositional superlattices: profiling the lattice-constant-scale spatial change of the designed Si-H bonding configurations,” Appl. Phys. Lett. 92(10), 101915, 2008. (EI、SCI)

6.

Yeu-Long Jiang and Yung-Chih Chang, “Rapid crystallization of a-Si:H films with various silicon-to-hydrogen bonding configurations using rapid energy transfer annealing,” Thin Solid Films, no. 500, Iss 1-2, pp. 316-321, 2006. (EI、SCI)

7.

Yeu-Long Jiang, Chi-Lin Chen, Chiung-Wei Lin and Shun-Fa Huang, “Fast Grain Growth of Metal-Induced Lateral Crystallization of Amorphous Silicon Using Rapid Energy Transfer Annealing,” Jpn. J. Appl. Phys., vol. 12A, no. 42, pp. L1416 - L1418, 2003. (EI、SCI)

8.

Yeu-Long Jiang, Chi-Lin Chen, Chiung-Wei Lin and Shun-Fa Huang, “Rapid and Efficient Recrystallization and Activation of Implanted Phosphorus Doping in Laser-annealed Polysilicon by Rapid Energy Transfer Annealing,” Jpn. J. Appl. Phys., vol. 12B, no. 42, pp. L1498 - L1500, 2003. (EI、SCI)

9.

S. S. Fann, Y. L. Jiang, and H. L. Hwang, “Operating principles and performance of a novel a-si:h p-i-n based x-ray detector for medical image applications,” IEEE, Transactions on Electron Devices, vol. 2, no. 50, pp. 341-346 , 2003. (EI、SCI)

10.

S.S. Fann, Y.L. Jiang, and H.L. Hwang, “An innovative a-Si:H p-i-n based x-ray medical image detector for low dosage and long exposure applications,” Appl. Surface Science, no. 212-213, pp. 765-769, 2003. (EI、SCI)

11.

Yeu-Long Jiang, “Rapid energy transfer annealing for the crystallization of amorphous silicon,” Jpn. J. Appl. Phys, vol. 8B, no. 42, pp. L999 - L1001, 2003. (EI、SCI)

12.

L. J. Hsien, Y. L. Chan, T. S. Chao, Y. L. Jiang, and C. Y. Kung, “Ultra-Shallow Junction Formation using Implantation through Capping Nitride Layer on Source/ Drain Extension,” Jpn. J. Appl. Phys., no. 41, pp. 4519-4520, 07 2002.

13.

T. Y. Shung, K. Y. J. Hsu, Y. L. Jiang, C. J. Tsai, “Design Issues of 2-dimensional Amorphous-Silicon Position-sensitive Detectors,” Thin Solid Films 1999, no. 337, Iss 1-2, pp. 226-231, 1999.

14.

K. C. Wang, K. L. Cheng, Y. L. Jiang, T. R. Yew, and H. L. Hwang, “Very Low Temperature Deposition of Polycrystalline Silicon Films Fabricated by Hydrogen Dilution With Electron Cyclotron Resonance Chemical Vapor Deposition,” Jpn. J. Appl. Phys. Part l, no. 34, Iss 2B, pp. 927-931, 01 1995. (SCI)

15.

Y.L. Jiang and H.L. Hwang, “Electron Transport in Hydrogenated Amorphous Silicon Quantum Wells,” Applied Surface Science, no. 48/49, pp. 392-404, 1991.

16.

Y.L. Jiang and H.L. Hwang, “Field-Drifting Resonant Tunneling Through a-Si:H/a-Sil-xCx:H Quantum Wells at Different Locations of the i-Layer of a p-i-n Structure,” IEEE Transactions on Electron Devices, vol. 12, no. 36, pp. 2816-2820, 1989.

17.

K.C.Hsu, C.S. Hong, Y.L. Jiang, and H.L. Hwang, “On the Stability of Amorphous Silicon Superlattices,” Solid STate Communications, vol. 7, no. 27, pp. 665-666, 1989.

18.

Y.L. Jiang and H.L. Hwang, “Field-Drifting Resonance Tunneling Through a-Si:H/a-Sil-xCx:H Double Barrier in the p-i-n Structure,” Japanese Jorunal of Applied Physcis, vol. 12, no. 27, pp. L2434-2437, 1988.

1.

Chien-Hui Li, Yeu-Long Jiang, Tai-Chao Kuo, and Ji-Hua Li, “Influence of the p-layer properties on hydrogenated microcrystalline silicon thin-film solar cell,” 2010 International Electron Devices and Materials Symposia, 11 2010. Jhongli, Taiwan, R.O.C.,NO-110,

2.

Tai-Chao Kuo, Yeu-Long Jiang, Chien-Hui Li, and Wei-Che Hung, “Variation of Crystal Phase of Hydrogenated Microcrystalline Silicon Films Induced by Various Substrate Materials,” The 5th International Conference on Technological Advances of Thin Films & Surface Coatings, 07 2010. Harbin, China,CCE4983,

3.

姜晶恬,江雨龍,郭泰照,陳俊諺,周儷芬,王派毅, “調變脈波頻率對氫化非晶矽薄膜太陽電池n層性能之影響,” 2009台灣光電科技研討會, IP029, 12 2009. 台灣，台北,

4.

張嘉洲,江雨龍,郭泰照,姜晶恬, “改變薄膜碳含量比例對氫化非晶碳化矽超晶格薄膜太陽電池之影響,” 2009台灣光電科技研討會, IP026, 12 2009. 台灣，台北,

5.

許隆興,江雨龍,郭泰照,翁暄美,周儷芬,王派毅, “以脈波調變方式製作p型氫化非晶碳化矽層對氫化非晶矽薄膜太陽電池性能之影響,” 2009台灣光電科技研討會, IP025, 12 2009. 台灣，台北,

6.

許子矜,江雨龍,郭泰照, “調變沈積壓力製作奈米矽層薄膜對p/i(奈米矽/非晶矽多層膜)/n太陽電池的影響,” 2009台灣光電科技研討會, IP024, 12 2009. 台灣，台北,

7.

洪偉哲,江雨龍,郭泰照,李建輝, “改變沉積壓力對氫化微晶矽太陽電池之影響,” 2009台灣光電科技研討會, IP021, 12 2009. 台灣，台北,

8.

Shih-Han Hsu, Yeu-Long Jiang, Tai-Chao Kuo ,Wei-Che Hung, “Effects of variation of structural phase on the performance of silicon thin-film solar cell,” International Conference on Optics and Photonics and Photonics in Taiwan, pp. Sat-S49-04, 12 2008. Taipei, Taiwan, R.O.C.,

9.

Shih-Chieh Lin, Yeu-Long Jiang, Tai-Chao Kuo, Chia-Chou Chang, “The influence of hydrogen dilution ratios on the protocrystalline silicon/amorphous silicon multilayers solar cells,” International Conference on Optics and Photonics and Photonics in Taiwan, pp. Sat-S49-03, 12 2008. Taipei, Taiwan, R.O.C,

10.

Yeu-Long Jiang, “Manipulating the Spatial Distribution of Silicon-Hydrogen Bonds of a-Si:H by a-Si:Hx/a-Si:Hy Superlattice,” First Indo-Taiwanese Workshop, 11 2008. NPL, New Delhi,

11.

Kai-Yi Hong, Yeu-Long Jiang, Tai-Chao Kuo, Tzu-Chin Hsu, “P/i(a-Si:Hx/a-Si:Hy supperlattices)/n solar cells prepared by periodical switching rf plasma,” 2008 International Electron Devices and Materials Symposia, pp. EO-674, 11 2008. Taichung, Taiwan, R.O.C.,

12.

Chen-Wei Peng, Yeu-Long Jiang, Tai-Chao Kuo, Ching-Tien Chiang, Pai-Yi Wang, Chia-Tsan Wang, Li-Fen Chou, “The effect of a-Si:H layers with various silicon-hydrogen bonding configurations on the performance of p(a-Si:H)/i(a-Si:H)/n(c-Si) solar cells,” 2008 International Electron Devices and Materials Symposia, pp. EO-673, 11 2008. Taichung, Taiwan, R.O.C.,

13.

Yeu-Long Jiang, “Silicon thin-film solar cell processing technology,” The 2008 Thin Film Photovoltaic Technology and Equipment Development Seminar, 09 2008. Hsinchu and Kaohsiung, Taiwan,

14.

江雨龍, “太陽能電池原理與技術,” 2008 薄膜與太陽能研討會, 08 2008. 國立中央大學光電科學與工程學系, 中壢,

15.

江雨龍, “氫化非晶矽薄膜太陽電池氫鍵結工程,” 2007 全球華人能源材料論壇, 04 2007. 台中,

16.

施智仁、江雨龍及楊木榮, “脈波調變電漿對氫化非晶矽太陽能電池本質層薄膜特性的影響,” 2007中國材料科學學會年會, pp. 01-061, 2007.

17.

林義敦、江雨龍、郭泰照、洪愷藝、周儷芬、王派毅及王家瓚, “雙P 型a-SiC:H 層的a-Si:H 薄膜太陽電池,” 2007台灣光電科技研討會, 2007.

18.

黃昭雄、江雨龍、郭泰照、許詩函、王家瓚、王派毅及周儷芬, “改變射頻功率及腔體壓力製作氫化微晶矽薄膜太陽電池,” 2007台灣光電科技研討會, 2007.

19.

楊孟家、江雨龍、郭泰照、林士傑、王派毅、王家瓚及周儷芬, “脈波調變射頻功率製作原晶矽多層膜太陽電池,” 2007台灣光電科技研討會, 2007.

20.

林明璋、江雨龍、郭泰照、彭振維、王派毅、王家瓚及周儷芬, “氫化多序矽薄膜太陽電池製作,” 2007台灣光電科技研討會, 2007.

21.

Tai-Chao Kuo, Yeu-Long Jiang, Peng-Tzong Kuo, Pei-Tzong Shih, Chao-Hsien Tseng, Zhen-You Lin, “Variation of Si-H bonds of a-Si:H films by pulse annealing,” Proceedings of the 2007 Optics and Photonics Taiwan, 2007. Taichung, Taiwan, R.O.C.,

22.

Yeu-Long Jiang, Pei-Tzong Shih, Chao-Hsien Tseng, Zhen-You Lin, Peng-Tzong Kuo, “Light emitting properties from nc-Si embedded in SiNX films,” Proceedings of the 2007 Optics and Photonics Taiwan, 2007. Taiwan, R.O.C.,

23.

Yeu-Long Jiang, Rui-Feng Lai, Zhen-You Lin, Pei-Tzong Shih, Chao-Hsien Tseng, Peng-Tzong Kuo, “Controlling the O/Si ratio of nanocrystal silicon oxide films and its influence on the light emission,” 11 2005. I-Shou University, Kao-Hsiung, Taiwan, CO19.,

24.

Yeu-Long Jiang, Jr-Yuan Shiu, Chao-Hsien Tseng, Peng-Tzong Kuo, Zhen-You Lin, Pei-Tzong Shih, “The influence of silicon nanocrystals embedded in amorphous silicon solar cells on the photodegradation effects,” 11 2005. I-Shou University, Kao-Hsiung, Taiwan, AP27,

25.

江雨龍、郭建忠、張詠誌、許志源、戴志憲、林智程、朱陸水、游志浩、杜偉新及賴瑞豐, “氫化非晶矽薄膜以快速能量傳輸回火技術結晶之研究,” 2003電子元件暨材料研討會, pp. 921~923, 11 2003. 台灣，基隆,

26.

S. S. Fann, Y. L. Jiang, and H. L. Hwang, “N-i-p-SiNx and p-i-n-SiNx x-ray image detectors for medical applications,” SPIE International Symposium of Medical Imaging, pp. 60-70, 02 2003. (EI)San Diego, California USA. Proc. SPIE Int. Soc. Opt. Eng. 5030, 60,

27.

S. S. Fann, Y. L. Jiang, and H. L. Hwang, “N-i-p-SiNx and p-i-n-SiNx photo detectors for two-dimentional imaging applications,” Proceedings of IEDMS 2002, pp. 481-484, 12 2002. Taipei, Taiwan,

28.

22. Y. L. Jiang, K. S. Lin, C. C. Kuo, Y. C. Chang, L. S. Chu, C. H. Yu, C. C. Lin, C. H. Tai, W. H. Tu, and K. A. Su, “Controlling the silicon and hydrogen bonding configurations and its influence of photodegradation in a-Si:H pin solar cells,” Proceedings of IEDMS 2002, pp. 511-514, 12 2002. Taipei, Taiwan,

29.

江雨龍、陳麗霞、巫文豪、吳佳龍、林光祥、張立勳、及廖一遂, “以MIC 及RTA 結合MIC 對ECR-CVD 沉積微晶矽薄膜的結晶化之研究,” 2001 年中華民國鍍膜科技研討會, pp. 117~120, 08 2001. 台灣，彰化,

30.

Y. L. Jiang, K. S. Wu, K. S. Lin, L. H. Chen, W. H. Wu, C. H. Wu, Y. S. Liao, and L. H. Chang, “Low dielectric constant and high thermal stability fluorinated amorphous carbon films,” 2000 IEDMS Symposium A, pp. 218-221, 12 2000. Chung-Li, Taiwan,

31.

Y. L. Jiang, S. H. Chen, L. H. Chen, K. S. Lin, W. H. Wu, C. H. Wu, Y. S. Liao, and L. H. Chang, “High crystallinity and large grain size uc-Si:H films deposition by ECR-CVD,” IEDMS Symposium C, pp. 285-288, 12 2000. Chung-Li, Taiwan,

32.

S. S. Fann, S. K. Chuang, Y. L. Jiang, and H. L. Hwang, “A Novel Design of a-Si:H Photodetector with Stacked Ferroelectric Capacitor Layer a X-ray Detection in Medical Imaging Applications,” IEDMS Symposium C, pp. 240-243, 12 2000. Chung-Li, Taiwan,

33.

江雨龍，吳貴盛, “脈波調變射頻電漿沉積氟化非晶碳薄膜,” 公元兩千年中華民國鍍膜科技研討會, pp. 174-177, 09 2000. 鹿港，台灣,

34.

L. J. Hsien, T. S. Chao, Y. L. Jiang, “Ultrashallow Junction Formation for Deep Sub-micron Device,” The Sixth Symposium on Nano Device Technology, pp. 58-61, 05 1999. Hsinchu,

35.

S. S. Fann, Y. L. Jiang, J. C. Wu, and H. L. Hwang, “A Novel Design of a-Si:H X-ray Detectors and signal read-out circuit for 2-D Medical Imaging Applications,” MRS Spring Meeting Apr. 8 , 01 1999. San Francisco, USA,

36.

Y. L. Jiang and M. C. Lee, “Aluminum induced Crystallization of Hydrogenated Amorphous Silicon Films at Low Temperature,” IEDMS, 01 1998. Tainan, Taiwan, AP-32-P.258,

37.

Y. L. Jiang, C. S. Ho, and L. J. Hsien, “The Properties of PECVD a-SiNx:H Films Influenced by Helium Dilution and Pulse RF Power,” IEDMS, pp. 273, 01 1998. Tainan, Taiwan, AP-36-P.273,

38.

Y. L. Jiang, M. J. Lee, and S. H. Chen, “he Structural Evolution of a-Si:H Films Prepared by Pulse RF Power Modulation with Hydrogen and Helium Dilution,” Materials Research Society Symposium Proceedings,Vol. 507, pp. 523-528, 01 1998.

39.

Y.L. Jiang and M.C. Lee, “The Structure evolution of a-Si:H films prepared by Pulse RF Power with the hydrogen and helium dilution,” accept for presentation at 1998 Materials Research Society Spring meeting, 1998.

40.

Y.L. Jiang and T.Y. Yew, “Characterization of a-SiGe:H Films Deposited by Pulse RF Power,” 1st Asia-Pacific International Symposium on the Basic and Application of Plasma Technology, pp. 195-198, 12 1997. Touliu, Yeulin, Taiwan, ROC.,

41.

Y.L. Jiang and T.Y. Yew, “Characterization of a-SiH Films Prepared by Pulse RF Power,” EDMS’ 97, pp. 500-503, 11 1997. Chung-Li, Taiwan, ROC,

42.

Y.L. Jiang and T.Y. Yew, “a-SiGe:H Films Deposited by Pulse RF Power,” EDMS’ 97, pp. 341-344, 11 1997. Chung-Li, Taiwan, ROC.,

43.

Y.L. Jiang, R. Y. Wang, H.L. Hwang, and T.R. Yew, “The Electrical Properties of In-situ Doped Polycrystalline Silicon Thin Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at 250 C,” Materias Research Society 1997 Spring Meeting, 1997.

44.

K.C. Wang, Y.L. Jiang, T.R. Yew, and H.L. Hwang, “Very Low Temperature Deposition of Micro/PolycrystallineSi Films Made by Hydrogen Dilution With PE-CVD and ECR-CVD,” Extended Abstractsof1994 SSDM, pp. 527, 1994. Yokohama, Jappan,

45.

Y.L. Jiang, L.S. Chuang and H.L. Hwang, “Hydrogenated Amorphous Silicon X-ray Detector For Medical Applications,” Extended Abstracts of ICSFS-7, pp. 361, 1994.

46.

Y.L. Jiang, Y.H. Shing, S.H. Lee, and H.L. Hwang, “P type a-SiC:H Window Layer Deposited by Novel Boron-atom-treatment method,” Extened Abstracts of ICSFS-7, 1994.

47.

Y.L. Jiang, Y.H. Shing, S.H. Lee, and H.L. Hwang, “P type a-SiC:H Window Layer Deposited by Novel Boron-atom-treatment method,” Extended Abstracts of ICSFS-7, pp. 445, 1994.

48.

Y.L. Jiang and H.L. Hwang, “Foundamental Consideration on Carrier Transport in Amorphous Silicon Superlattices,” Materials Research Society Symposium Proceedings Vol.219, pp. 869-873, 1991.

49.

Y.L. Jiang.,H.L. Hwang and M.S. Feng, “Studies on Carrier Transport Through a-Si:H/a-Si1-xCx: H Quantum Well Structures Imbedded in the i Layer of a p-i-n Structure,” Materials Research Society Symposium Proceedings, Vol. 192, pp. 335-340, 1990.

50.

Y.L. Jiang and H.L. Hwang, “Remarks on Sequential Resonant Tunneling Through the a-Si:H/a-Sil-xCx:H Multiquantum Well Imbedded in the p-i-n Structure,” Proceedings of the 1989 Electronic Devices and Material Symposium, pp. 267-272, 01 1989. Hsinchu, Taiwan, R.O.C.,

51.

Y.L. Jiang and H.L. Hwang, “Experimental and Theoretical Analysis of Resonant Tunneling Through a-Si:H/a-Sil-xCx:H Double-barrier in p-i-n Structure,” Maierials Research Society Symposium Prceedings,Vol. 149, pp. 687-692, 1989.

52.

Y. L. Jiang and C. C. Kuo, “The I-V Characteristics of p/i/n a-Si:H Solar Cell with the I layer Deposited with Pulse Modulation RF Power,” IEDMS, 12 1988. Tainan, Taiwan, AP-28-P.243,

53.

S. S. Fann, Y. L. Jiang, J. C. Wu, and H. L. Hwang, “A Novel Design and Fabrication of Hydrogenated Amorphous Silicon X-ray Detectors for Medical Imaging Applications,IEDMS 1998, Tainan, Taiwan,20-23, D1-9,” pp. 314, 01 1988.

54.

Y.L. Jiang and H.L. Hwang, C.E. Nebel and G.H. Bauer, “Evidence of Resonant Tunneling in a-Si:H/a-Sil-xCx:H Superlattice,” Extended Abstracts of the 20th Conference on Solid State Devices and Materials, pp. 239-242, 1988. Tokyo, Japan,

55.

Y.L. Jiang, K.C. Hsu, C.S. Hong, and H.L. Hwang, “Studies on Stability and Quantum Size Effects of a-Si:H/aSil-xCx:H Superlattices,” Proceedings of the 1988 International Electronic Devices and Materials Symposium, pp. 7-11, 1988. Kaohsiung, Taiwan, R.O.C.,

56.

Y.L. Jiang and H.L. Hwang, “Quantum Size Effects in a-Si:H/a-SiC:H Superlattice Studies by ResonanceTunneling,” Proceedings of the 19th International Conference on the Physics of Semiconductors, pp. 1605-1608, 1988. Warsaw, Poland,

57.

C.E. Nebel, F. Kessler, G. Bilger, G.H. Bauer, Y.L. Jiang, H.L. Hwang, K.C. Hsu, and C.S. Hong, “Evidence of Quantum Size Effects in a-Si:H/a-Sil-xCx:H Superlattices,” Materials Research Society Symposium Proceedings, Vol.118, pp. 361-366, 1988.

58.

Y.L. Jiang, R.Y. Wang, H.L. Hwang, and T.R. Yew, “The Electrical Properties of In-situ Doped Polycrystalline Silicon Thin Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at 250 C,” Materials Research Society Symposium Proceedings.

1.

江雨龍, “第六章 氫化非晶矽太陽電池,” 太陽電池，出版：五南圖書出版公司, 12 2008.

2.

江雨龍, “第四章 矽薄膜太陽能電池,” 太陽能電池技術手冊，出版：台灣電子材料與元件協會, 06 2008.

3.

江雨龍, “矽奈米晶粒/氧化矽超晶格之發光研究,” 工程科技通訊94期, pp. 59, 10 2007.

4.

江雨龍, “氫化非晶矽及微晶矽薄膜太陽電池,” 電子資訊第13卷第1期，台灣電子材料與元件協會, 06 2007.

1.

江雨龍, “選擇性偵測不同顏色光偵測器之位壘結構,” 中華民國專利發明申請號第93133156號, 10 2005.

2.

江雨龍等, “一種筆式輸入系統及其輸入方法,” 中華民國發明專利第197891號, 03 2004.

3.

江雨龍等, “Fabrication of amorphous silicon/amorphous silicon germanium NI1PI2N infared position detectors,” 美國發明專利證號: US 6,680,478 B2, 01 2004.

4.

江雨龍, “快速能量傳輸回火裝置與方法,” 中華民國發明專利第185198號, 08 2003.

5.

江雨龍, “Rapid energy transfer annealing device and process,” 美國發明專利申請中, 01 2003.

6.

江雨龍等, “一種非晶矽/非晶矽鍺NI1PI2N結構及紅外光位置偵測器,” 中華民國專利發明第170607號, 12 2002.

7.

江雨龍等, “光感測元件及其工作模式,” 中華民國專利發明第161579號, 08 2002.

8.

江雨龍, “快速能量傳輸回火裝置與方法,” 中國大陸發明專利申請中, 07 2002.

9.

江雨龍等, “Photodetector And Its Operating Modes,” 美國發明專利申請中, 04 2002.

10.

江雨龍等, “可透視式光位置感應裝置及其應用,” 中華民國專利發明第103223號, 03 1999.